STT3998N dual n-ch enhancement mode mos.fet 3.7 a, 20 v, r ds(on) 58 m ? elektronische bauelemente 27-aug-2010 rev. a page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs compliant product a suffix of ?-c? specifies halogen and lead-free description these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. features ? low r ds(on) provide higher efficien cy and extends battery life. ? low thermal impedance copper leadframe tsop-6 saves board space. ? fast switching speed. ? high performance trench technology. product summary product summary v ds (v) r ds (on) (m ? ? i d (a) 20 58@v gs = 4.5v 3.7 82@v gs = 2.5v 3.1 absolute maximum ratings(t a =25 c unless otherwise noted) parameter symbol ratings unit maximum drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current a t a = 25 c i d 3.7 a t a = 70 c 2.9 pulsed drain current b i dm 8 a continuous source current (diode conduction) a i s 1.05 a power dissipation a t a = 25 c p d 1.15 w t a = 70 c 0.7 operating junction and st orage temperature range tj, tstg -55 ~ 150 c thermal resistance ratings parameter symbol typ. max. unit maximum junction to ambient a t Q 10 sec r ? ja 93 110 c / w steady state 130 150 notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature. ref. millimete r ref. millimete r min. max. min. max. a 2.70 3.10 g 0 0.10 b 2.60 3.00 h 0.60 ref. c 1.40 1.80 j 0.12 ref. d 1.10 max. k 0 10 e 1.90 ref. l 0.95 ref. f 0.30 0.50 tsop-6 b l f h c j d g k a e 1 23 4 5 6 g g s s d d
STT3998N dual n-ch enhancement mode mos.fet 3.7 a, 20 v, r ds(on) 58 m ? elektronische bauelemente 27-aug-2010 rev. a page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions gate-threshold voltage v gs(th) 0.7 - - v v ds =v gs , i d = 250ua gate-body leakage i gss - - 1 ua v ds = 0v, v gs = 12v zero gate voltage drain current i dss - - 0.1 ua v ds = 16v, v gs = 0v - - 1 v ds = 16v, v gs = 0v, t j = 55 c on-state drain current a i d(on) 30 - - a v ds = 5v, v gs = 4.5v drain-source on-resistance a r ds(on) - - 58 m ? v gs = 4.5v, i d = 3.7a - - 82 v gs = 2.5v, i d = 2.7a forward transconductance a g fs - 10 - s v ds = 10v, i d = 6.8a diode forward voltage a v sd - 0.8 - v i s = 1.05a, v gs = 0v dynamic b total gate charge q g - 7.5 - nc v ds = 10v, v gs = 4.5v, i d = 3.7a gate-source charge q gs - 0.6 - gate-drain charge q gd - 1.0 - turn-on delay time t d(on) - 5 - ns v dd = 10v, v gs = 4.5v, r gen = 15 ? , i d = 1a rise time t r - 12 - turn-off delay time t d(off) - 13 - fall time t f - 7 - notes a. pulse test pw Q 300 us duty cycle Q 2%. b. guaranteed by design, not su bject to production testing.
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